mosfet metaloxidesemiconductorfieldeffecttransistor optimos?power-transistor,-30v BSL303SPE datasheet rev.2.0 final industrial&multimarket
BSL303SPE optimos?-p 3 small-signal-transistor features p-channel enhancement mode logic level (4.5v rated) esd protected avalanche rated qualified according to aec q101 100% lead-free; rohs compliant, halogen free maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c -6.3 a t a =70 c -5.0 pulsed drain current i d,pulse t a =25 c -25.2 avalanche energy, single pulse e as i d =-6.3a, r gs =25 ? 30.0 mj reverse diode d v /d t d v /d t i d =-6.3 a, v ds =-15 v, d i /d t =100 a/s, t j,max =150 c 6k v / s gate source voltage v gs 20 v power dissipation p tot t a =25 c w operating and storage temperature t j , t stg -55 ... 150 c esd class jesd22-a114 -hbm 2 (2kv to 4kv) v soldering temperature 260 c c iec climatic category; din iec 68-1 55/150/56 c value 2.0 pg-tsop-6 v ds -30 v r ds(on),max v gs =-10 v 33 m ? v gs =-4.5 v 52 i d -6.3 a product summary 5 6 1 2 3 4 type package tape and reel information marking hal. free packing BSL303SPE pg-tsop-6 h6327: 3000 pcs/ reel spv yes non dry r ev 2.0 page 1 2014-11-18
BSL303SPE parameter symbol conditions unit min. typ. max. thermal characteristicsthermal resistance, junction - minimal footprint r thjs - - 50 k/w smd version, device on pcb r thja minimal footprint - - 230 6 cm 2 cooling area 1) - - 62.5 electrical characteristics, at t j =25 c, unless otherwise specified static characteristicsdrain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -30 - - v gate threshold voltage v gs(th) v ds =0v, i d =-30a -2 -1.5 -1 drain-source leakage current i dss v ds =-30v, v gs =0 v, t j =25 c - - -0.1 ? a v ds =-30v, v gs =0v, t j =150 c - - -20 gate-source leakage current i gss v gs =-20v, v ds =0v --- 7 a drain-source on-state resistance r ds(on) v gs =-4.5 v, i d =-5 a -3 55 2 m ? v gs =-10 v, i d =-6.3 a -2 53 3 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-5 a 12.9 - s values 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (single layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. (t < 5 sec.) rev 2.0 page 2 2014-11-18
BSL303SPE parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance c iss - 1053 1401 pf output capacitance c oss - 482 641 reverse transfer capacitance c rss -3 35 0 turn-on delay time t d(on) - 8.0 12 ns rise time t r - 7.7 12 turn-off delay time t d(off) - 23.7 36 fall time t f - 8.3 12 gate char g e characteristics 2) gate to source charge q gs - 3.3 4.4 nc gate to drain charge q gd - 1.6 2.4 gate charge total q g - 14.0 20.9 gate plateau voltage v plateau - 3.1 - v reverse diodediode continous forward current i s - - -6.3 a diode pulse current i s,pulse - - -25.2 diode forward voltage v sd v gs =0 v, i f =-6.3 a, t j =25 c - -0.9 -1.1 v reverse recovery time 2) t rr -3 34 9 n s reverse recovery charge 2) q rr -2 84 3 n c 2) defined by design.not subjected to production test v r =-15 v, i f =-6.3 a, d i f /d t =100 a/s t a =25 c values v gs =0 v, v ds =-15 v, f =1 mhz v dd =-15 v, v gs =- 10 v, i d =-6.3 a, r g,ext =6 ? v dd =-15 v, i d =-6.3 a, v gs =0 to -10 v rev 2.0 page 3 2014-11-18
BSL303SPE 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); v gs ? -10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c; d =0 z thja =f( t p ) parameter: t p parameter: d = t p / t 10 s 100 s 1 ms 10 ms dc 10 -2 10 -1 10 0 10 1 10 2 10 -3 10 -2 10 -1 10 0 10 1 10 2 i d [a] v ds [v] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 z thja [k/w] t p [s] 0 0.5 1 1.5 2 2.5 0 40 80 120 p tot [w] t a [ c] 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 0 20 40 60 80 100 120 140 i d [a] t a [ c] rev 2.0 page 4 2014-11-18
BSL303SPE 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c 3.3 v 3.5 v 3 v 4 v 4.5 v 10 v 0 10 20 30 40 50 60 70 80 90 100 110 120 130 024681 0 r ds(on) [m ? ] i d [a] 0 5 10 15 20 02468 g fs [s] i d [a] 2.8 v 3 v 3.3 v 10 v 3.5 v 4 v 4.5 v 0 2 4 6 8 10 0123 i d [a] v ds [v] 25 c 150 c 0 1 2 3 4 01234 i d [a] v gs [v] rev 2.0 page 5 2014-11-18
BSL303SPE 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =-6.3 a; v gs =-10 v v gs(th) =f( t j ); v ds =v gs ; i d =-30 a parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz; t j =25c i f =f( v sd ) parameter: t j typ 98 % 0 10 20 30 40 50 60 -60 -20 20 60 100 140 r ds(on) [m ? ] t j [ c] typ 98 % 2 % 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 v gs(th) [v] t j [ c] ciss coss crss 10 1 10 2 10 3 10 4 0 5 10 15 20 c [pf] v ds [v] 25 c 150 c 25 c, 98% 150 c, 98% 10 -3 10 -2 10 -1 10 0 10 1 10 2 0 0.4 0.8 1.2 1.6 i f [a] v sd [v] rev 2.0 page 6 2014-11-18
BSL303SPE 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =-6.3 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =-250 a 28 29 30 31 32 -60 -20 20 60 100 140 v br(dss) [v] t j [ c] 6 v 15 v 24 v 0 2 4 6 8 10 024681 01 21 4 v gs [v] q gate [nc] 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 i av [a] t av [s] v gs q gate v gs(th) q g(th) q gs q gd q sw q g rev 2.0 page 7 2014-11-18
BSL303SPE packa g e outline: footprint: packaging: dimensions in mmnote: for s y mmetric t y pes there is no defined pin 1 orientation in the reel. tsop-6 gpx09300 1.6 0.1 0.1 2.5 0.1 0.25 1.1 max. 0.1 max. (2.25) +0.1-0.05 0.35 (0.35) 10 ? max. 10 ? max. 2.9 0.2 b 0.2 m b 6x 0.95 1.9 a 0.2 a m 0.15 +0.1-0.06 3 2 1 4 5 6 0.5 0.95 1.9 2.9 hlg09283 remark: wave soldering possible dep. on customers process conditions 2.7 4 3.15 pin 1 marking cpwg5899 8 0.2 1.15 rev 2.0 page 8 2014-11-18
10 BSL303SPE rev.2.0,2014-12-10 revisionhistory BSL303SPE revision:2014-12-10,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2014-12-10 release of final version welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
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